Cl4(PhCN)W(NPh) as a single-source MOCVD precursor for deposition of tungsten nitride (WNx) thin films
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چکیده
The tungsten phenylimido complex Cl4(PhCN)W(NPh) (2b) was tested as a single-source precursor for growth of tungsten nitride (WNx ) thin films, and results were compared to films previously deposited from the isopropylimido complexes Cl4(RCN)W(N i Pr) (1a, R /CH3; 1b, R /Ph). Films deposited from 2b exhibited growth rates ranging from 2 to 21 Å min 1 over a temperature range of 475 /750 8C, and the apparent activation energy for film growth in the kinetically controlled regime was 1.419/0.58 eV. Amorphous b-WNx films were deposited below 500 8C, with minimum film resistivity and sheet resistance of 225 mV-cm and 75 V/ I, respectively, observed for deposition at 475 8C. In contrast, films deposited from the isopropylimido complexes 1a,b exhibited higher growth rates and higher nitrogen content over a similar temperature range. These differences are attributed to the higher dissociation energy of the imido N /C bond in phenylimido complex 2b. Mass spectrometry fragmentation patterns are consistent with this behavior. # 2003 Elsevier B.V. All rights reserved.
منابع مشابه
MOCVD of tungsten nitride ( WN x ) thin films from the imido complex Cl 4 ( CH 3 CN ) W ( N i Pr )
Thin films of tungsten nitride (WNx) were deposited by MOCVD from the single-source precursor Cl4(CH3CN)W(N Pr). Films were analyzed by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and cross-section scanning electron microscopy (X-SEM), while the film resistivity was determined by four-point probe. Film growth rates ranged from 10 to 27 ( A/min within a temperature range of 450–70...
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